/mm, respectively, ten V;V DS of 10 current decreased bydecreased by and
/mm, respectively, ten V;V DS of ten existing decreased bydecreased by and 547 and 451 respectively, at a VDS of at a hence, the V; thus, the present practically 17.5 practically 17.5 with a rise inside the from 300 to 400 K. The to 400 K. The IDS degradation with an increase inside the temperature temperature from 300 IDS degradation of your GaN on with the GaN on QST (17.5 ) was 9 smaller than that in the GaN on Si (26.5 ) when the devices had been operated inside a high-temperature environment (400 K), as shown in Figure 4d.Membranes 2021, 11,Membranes 2021, 11,five of5 ofQST (17.five ) was 9 smaller than that in the GaN on Si (26.5 ) when the devices had been operated in a high-temperature atmosphere (400 K), as shown in Figure 4d. The normalized RON ratio from the GaN on on the GaN increased by 1.32 and 1.57 by 1.32respectively, as the normalized RON ratio QST and Si on QST and Si improved instances, and 1.57 occasions, the temperature elevated from 300 K to 400from 300 K to 400 K. The results depicted in respectively, as the temperature increased K. The results depicted in Figure four indicate that the 4QST substrate can besubstrate somewhat highrelatively higher temperatures due to the fact Figure indicate that the QST used at is often used at temperatures because of its high thermal conductivity. of its high thermal conductivity.Figure four. Analysis beneath different Figure 4. Analysis below numerous temperatures: (a) Transfer characteristics (I(IDS GS) for GaN on Si and GaN on QST, (b) SS Transfer traits DS GS GaN on Si and GaN on QST, (b) ratio and leakage present at V VGS -6 V, (c) DS DS output current, and (d) WZ8040 Purity IDSmax degradation and R ratio. SS ratio and leakage current at GS ==-6 V, (c) IIDS DS output existing, and (d) IDSmax degradation and RONON ratio.Temperature is critical consideration for device reliability. We measured the IEM-1460 In stock surface Temperature is aa essential consideration for device reliability.We measured the surface temperature distribution in each devices beneath operation at a high currentand observed temperature distribution in each devices under operation at a higher existing and observed the self-heating effect from the various substrates. The surface temperature maps presented the self-heating effect in the distinct substrates. The surface temperature maps presented in Figure 5a,b have been obtained based on infrared radiation intensity measured by by in Figure 5a,b have been obtained as outlined by thethe infrared radiation intensity measuredan an P384G detector. They determined the emissivity calibration with the QST QST and Si IRMIRM P384G detector. They determined the emissivity calibration of theand Si subsubstrate devices inside 50 s of operation at a current mA/mm. As illustrated in Figure strate devices within 50 s of operation at a existing of 300 of 300 mA/mm. As illustrated in Figure surface peak temperatures with the of your Si ranged from from 36.9 C to 46.1 C 5a,b, the5a,b, the surface peak temperaturesSi device device ranged36.9 to 46.1 and and of the QST QST device ranged from 36.6 C . Since the GaN on QST dissithose these of thedevice ranged from 36.6 to 41.1to 41.1 C. Since the GaN on QST dissipated heat quickly, the temperature the operating device device didn’t enhance pated heat rapidly, the temperature outsideoutside the operatingdid not boost considconsiderably. in the GaN the GaN on dissipate; dissipate; nonetheless, soon after 22 s of device erably. The heatThe heat of on Si did not Si did not nevertheless, just after 22 s of device operation, operatio.
